[13p-A22-1~5] Toward future applications of oxides electronics; past, present and future

[13p-A22-4] Progress in Development of Gallium Oxide Epi/Substrates

〇Kohei Sasaki^1,2,3, Akito Kuramata^1,2, Takekazu Masui^1,2, Ken Goto^1,2,4, Rie Togashi⁴, Hisashi Murakami⁴, Yoshinao Kumagai⁴, Bo Monemar^5,6, Masataka Higashiwaki³, Shigenobu Yamakoshi^1,2 (1.Tamura Corp., 2.NCT, 3.NICT, 4.Tokyo Univ. of Agri. & Tech., 5.TUAT GIRO, 6.Linkoping Univ.)

Keywords:Ga2O3, homoepitaxial growth, single crystal wafer

β-Ga₂O₃ is the suitable material for next generation power devices because it has excellent material properties and mass productivity. We are developing Ga₂O₃ single-crystal wafer by using EFG method. 2-inch wafer is available for sale. Recently, we have succeeded in developing homoepitaxial growth technique with high growth rate over 10 µm/h and wide carrier concentration control range by HVPE.