4:30 PM - 5:00 PM
[13p-A22-4] Progress in Development of Gallium Oxide Epi/Substrates
Keywords:Ga2O3, homoepitaxial growth, single crystal wafer
β-Ga2O3 is the suitable material for next generation power devices because it has excellent material properties and mass productivity. We are developing Ga2O3 single-crystal wafer by using EFG method. 2-inch wafer is available for sale. Recently, we have succeeded in developing homoepitaxial growth technique with high growth rate over 10 µm/h and wide carrier concentration control range by HVPE.