Fabrication of SiV centers by ion implantation and the dependence of creation yield on the implantation energy

Risa Kagami; Itaru Higashimata; Takuma Okada; Tokuyuki Teraji; Shinobu Onoda; Moriyoshi Haruyama; Takeshi Ohshima; Takahiro Shinada; Wataru Kada; Osamu Hanaizumi; Junichi Isoya; Takashi Tanii

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[13p-A26-1~16] 6.2 Carbon-based thin films

Tue. Sep 13, 2016 1:15 PM - 6:00 PM A26 (203-204)

Hiroshi Kawarada(Waseda Univ.), Junko Hayase(Keio Univ.), Satoshi Yamasaki(AIST)

5:30 PM - 5:45 PM

[13p-A26-15] Fabrication of SiV centers by ion implantation and the dependence of creation yield on the implantation energy

〇Risa Kagami¹, Itaru Higashimata¹, Takuma Okada¹, Tokuyuki Teraji², Shinobu Onoda³, Moriyoshi Haruyama^3,4, Takeshi Ohshima³, Takahiro Shinada⁵, Wataru Kada⁴, Osamu Hanaizumi⁴, Junichi Isoya⁶, Takashi Tanii¹ (1.Waseda Univ., 2.NIMS, 3.QST, 4.Gunma Univ., 5.Tohoku Univ., 6.Univ. of Tsukuba)

Keywords:silicon vacancy center