Control of valence states of Eu ion in GaN and magnetism

Takumi Nunokawa; Yusuke Miyata; Takahiro Sakurai; Norifumi Fujimura; Hitoshi Ohta; Yasufumi Fujiwara

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[13p-A35-1~15] 13.9 Optical properties and light-emitting devices

Tue. Sep 13, 2016 1:15 PM - 5:15 PM A35 (303-304)

Hiroko Kominami(Shizuoka Univ.), Yasushi Nanai(Nihon Univ.)

2:15 PM - 2:30 PM

[13p-A35-5] Control of valence states of Eu ion in GaN and magnetism

〇Takumi Nunokawa¹, Yusuke Miyata², Takahiro Sakurai³, Norifumi Fujimura², Hitoshi Ohta³, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.Kobe Univ.)

Keywords:GaN, Eu, Magnetism

We have investigated valence state of Eu ions in Eu-doped GaN (GaN:Eu) grown at low temperatures by organometallic vapor phase epitaxy, in which trivalent and divalent Eu ions were mixed. Maximum Eu²⁺ ratio of 55% was obtained at the growth temperature of 700°C. In this study, we introduce the effect of donor codoping and the result of magnetoresistance measurement.