[13p-A35-1~15] 13.9 Optical properties and light-emitting devices

△ [13p-A35-8] Spin relaxation in Si doped GaAs grown by VB method

〇Shima Tanigawa¹, Masayuki Iida¹, Yoshiki Nakamura¹, Canyu Jiang¹, Ko Nakayama¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

Keywords:spin relaxation, Vertical Bridgman, Si doped GaAs

The Vertical Bridgman (VB) growth method can produce materials with low dislocation density and high homogeneity. This growth technique improved performance and reliability of laser and high brightness light emitting diodes. In this study, by time-resolved spin-dependent pump and probe reflectance measurements, we have investigated the spin relaxation in Si doped GaAs grown by VB method. At 10 K and 50 K, an excitation power dependence was observed. Between 10 K and 300 K, a negative temperature dependence was observed. This research can contribute to the clarification of spin relaxation mechanism of III-V semiconductors.