[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

[13p-B13-6] Fluctuation of FinFET parasitic resistance: Impact of extension doping condition

〇Takashi Matsukawa¹, Takahiro Mori¹, Yukinori Morita¹, Shintaro Otsuka¹, Yongxun Liu¹, Shinichi O'uchi¹, Hiroshi Fuketa¹, Shinji Migita¹, Meishoku Masahara¹ (1.AIST)

Keywords:FinFET, Parasitic resistance, Ion Implantation

Fluctuation of parasitic resistance of FinFETs is evaluated and the impact of the extension doping condition, i.e. the fin thickness and implanted ion species, is investigated. Using relationship between the on-resistance and the inverse of the gate overdrive, parasitic resistance is obtained for each sample FinFET. It is revealed that both the average and the standard deviation of the parasitic resistance are suppressed by relaxing the fin thickness and also by using lighter Phosphorus ion instead of Arsenic for the extension doping of the FinFETs.