[13p-B7-1~12] Current Trends and Issues in Nanointerface Phenomena and the CharacterizationTechniques

[13p-B7-11] Resistance Measurement of Langmuir-Blodgett Films under High Pressure

〇Yasuhiro Miura¹, Hiroyuki Hasegawa², Kiyoshi Torizuka³, Yoshiya Uwatoko³ (1.Toin Univ. Yokohama, 2.NICT-KARC, 3.Univ. of Tokyo)

Keywords:high pressure, electrical resistance, Langmuir-Blodgett films

Resistance measurements under high pressure are well-established techniques in the research field of bulk molecular conductors. In fact, among various molecular superconductors, certain numbers of systems undergo superconductivity only under high pressure. Therefore, pressure application is a useful tool for exploring in the universe of molecular materials. As for molecular ultrathin films, however, a very small number of reports have come to our knowledge. In particular, no reports have come to our knowledge as for resistance measurements of Langmuir-Blodgett films under high pressure except our works. In this paper, we would like to report resistance behavior of the Langmuir-Blodgett films based on ditetradecyldimethylammonium-Au(dmit)₂ salt under high pressure. We would like to also touch on technical problems and issues for measuring the resistance of molecular ultra-thin films under high pressure.