[13p-C301-1~12] 4.8 Strong Light Excitation Phenomena Applied to Materials and Bio Engneering

▲ [13p-C301-10] Ultrashort pulse laser slicing of wide bandgap 4H-SiC crystal

〇Eunho Kim¹、Yasuhiko Shimotsuma¹、Masaaki Sakakura²、Kiyotaka Miura¹ (1.Kyoto Univ.、2.Kyoto univ. SACI)

キーワード：SiC, Ultrafast pulse laser, Laser slice

Among the semiconducting materials, silicon carbide is of interest target for femtosecond laser irradiation because of their extremely hard material and wide band gap characteristics. In this study, we have demonstrated exfoliation of 4H-SiC single crystal by ultrafast pulse laser induced slicing method instead of conventional wire-slice. We have demonstrated that the thin SiC could be successfully sliced off from a wafer by focusing an ultrafast pulse laser with double pulse configuration. The loss produced by the femtosecond laser slicing method was more than 4 times less than that by the conventional wire-saw method.