Temperature Profile Dependence of Epitaxial Graphene Formation on Vicinal Si-face SiC(0001) Substrate by RF-induction Heating

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology（Poster）

Tue. Sep 13, 2016 1:30 PM - 3:30 PM P5 (Exhibition Hall)

1:30 PM - 3:30 PM

〇Takuya Wada¹, Yuma Doko¹, Kosuke Imai¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

Keywords:Graphene, Si sublimation method