[13p-P5-1~64] 17 Nanocarbon Technology（Poster）

[13p-P5-32] Theoretical Study on Inclination Angle Dependence of Graphene Growth on SiC(0001)

〇Jun Nara^1,2, Takahiro Yamasaki^1,2, Nobuo Tajima^1,2, Takahisa Ohno^1,2,3 (1.NIMS, 2.MARCEED, 3.IIS, Univ of Tokyo)

Keywords:Graphene, Silicon Carbide, First-principles Molecular Dynamics Simulation

We investigate the growth mechanism of graphene on SiC substrate by Si sublimation by using first-principles molecular dynamics simulations. We found that 2D structures made on the surface have different shapes depending on the substrate surface structures. On (0001) terraces, 2D structures become relatively flat, while on (11-2n) facets, those have curves like a part of spherical structures.