13:30 〜 15:30
▲ [13p-P5-38] Graphene-Growth by Microwave Surface-Wave Plasma CVD
キーワード：graphene, nitrogen doping, plasma CVD
Growing quality graphene films are dominated by thermal chemical vapor deposition (CVD) system. Plasma CVD process could be a very good alternative of thermal CVD for growing graphene as the creation of plasma of the reacting gaseous precursors allows deposition at lower temperature with respect to thermal CVD. Since plasma can damage the growing material, one needs to design the equipment in order to avoid the damaging effects of the plasma. We had demonstrated1 a simple and economical method, avoiding direct exposure of the sample to the plasma to get high-quality graphene film on Cu substrate by micro wave (Mw) surface-wave plasma (SWP) CVD at relatively low temperature (550℃). Our previous results also suggested that camphor is a very good alternative precursor to grow isolated graphene domains2 as well as quality graphene film1 at low temperature.
Nitrogen doping of graphene could be performed efficiently by this technique using nitrogen or ammonia gas during graphene growth. In this work, some aspects of nitrogen doped graphene grown by MW SWP CVD will be discussed.
References
Hideo Uchida et al. et al (2016) Journal of Physical Science and Application 6 (2) 1634-38.
Hare Ram Aryal et al. (2016) 2D Mater. 3 011009.
Nitrogen doping of graphene could be performed efficiently by this technique using nitrogen or ammonia gas during graphene growth. In this work, some aspects of nitrogen doped graphene grown by MW SWP CVD will be discussed.
References
Hideo Uchida et al. et al (2016) Journal of Physical Science and Application 6 (2) 1634-38.
Hare Ram Aryal et al. (2016) 2D Mater. 3 011009.