[13p-P5-1~64] 17 Nanocarbon Technology（Poster）

[13p-P5-52] Growth of Monolayer MoS₂ by Scalable CVD Method using Gas-Phase Precursors

〇Yoshiki Sakuma¹, Takaaki Mano¹, Akihiro Ohtake¹ (1.NIMS)

Keywords:transition metal dichalcogenide, MoS2, CVD

To develop a scalable CVD technique, we tried to grow MoS₂ on 2-inch SiO₂/Si substrates by using MoO₂Cl₂ and H₂S as gas-phase precursors. We confirmed by Raman spectroscopy that MoS₂ films could be successfully deposited under the temperature range of 600-800 °C and the pressure of 50 Torr. An uniform growth was achieved over a 2-inch wafer. The peak separation of two Raman modes and polarized Raman spectra show that the thickness of MoS₂ film grown at 700 °C is monolayer and its basal plane is parallel to the substrate surface. Clear PL emission was also observed from the monolayer MoS₂ film.