[13p-P7-1~17] 6.4 Thin films and New materials

[13p-P7-7] Fabrication of multi-layered metal electrodes for high temperature electronic devices

〇Tomohiko Nakajima¹, Takeshi Ito², Keiko Kouno¹, Koichi Urano², Kiyoshi Tanaka², Yuki Kitanaka³, Yoshinobu Nakamura³, Masaru Miyayama³, Tetsuo Tsuchiya¹ (1.AIST, 2.KOA Corp., 3.The Univ. of Tokyo)

Keywords:power electronics, multi-layered metal films, electrodes

In SiC devices for power electronics, high temperature resistance will be necessary for the related electric components. Especially, resistors need temperature resistance at around 300 °C in light of Joule heating. We studied the mechanism of deterioration at high temperature in resistors, and revealed large deterioration of multi-layered metal electrodes rather than the resistor material itself.