The 77th JSAP Autumn Meeting, 2016

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[13p-P7-1~17] 6.4 Thin films and New materials

Tue. Sep 13, 2016 4:00 PM - 6:00 PM P7 (Exhibition Hall)

4:00 PM - 6:00 PM

[13p-P7-7] Fabrication of multi-layered metal electrodes for high temperature electronic devices

Tomohiko Nakajima1, Takeshi Ito2, Keiko Kouno1, Koichi Urano2, Kiyoshi Tanaka2, Yuki Kitanaka3, Yoshinobu Nakamura3, Masaru Miyayama3, Tetsuo Tsuchiya1 (1.AIST, 2.KOA Corp., 3.The Univ. of Tokyo)

Keywords:power electronics, multi-layered metal films, electrodes

In SiC devices for power electronics, high temperature resistance will be necessary for the related electric components. Especially, resistors need temperature resistance at around 300 °C in light of Joule heating. We studied the mechanism of deterioration at high temperature in resistors, and revealed large deterioration of multi-layered metal electrodes rather than the resistor material itself.