[13p-P8-1~46] 10 スピントロニクス・マグネティクス(ポスター)

▼ [13p-P8-21] Modulation of magnetic anisotropy in intentionally oxidized Co thin film by ionic liquid gating

〇Takamasa Hirai¹、Tomohiro Koyama¹、Yuki Hibino¹、Aya Obinata¹、Kazumoto Miwa²、Shimpei Ono²、Makoto Kohda³、Daichi Chiba¹ (1.The Univ. of Tokyo、2.CRIEPI、3.Tohoku Univ.)

キーワード：magnetism, voltage control, electrochemical reaction

Voltage control of magntic anisotropy (MA) has great importance from an application of viewpoint to reduce energy consumption for the writing operation of magnetic memory devices, and clarification of the mechanism is intensively studied. We have reported a possibility that the mechanism depends on the sign of the applied gate voltage V_G in the electric double layer capacitor with the pure metallic Co thin electrode. The result is positive V_G modulated the interface anisotropy at Co interface through the change in the electron density, on the other hand MA change in negative voltage is dominated by the Co oxidation. In this presentation, the mechanism is discussed using the Co thin films subjected to intentional mild oxidation. Compared to the result in the as-deposited sample, larger MA modulation at V_G = +2 V was clearly observed. Therefore it is suggested the reduction of the CoO by positive V_G application likely dominates the large MA modulation in the sample after mild oxidation.