[13p-P8-1~46] 10 スピントロニクス・マグネティクス(ポスター)

▲ [13p-P8-34] Voltage Controlled Magnetic Anisotropy Change in Different Temperature Annealed Magnetic Tunnel Junctions

〇(DC)Amit Kumar Shukla¹、Minori Goto¹、Kohei Nawaoka¹、Shinji Miwa¹、Yoshishige Suzuki¹ (1.Osaka university)

キーワード：Voltage controlled magnetic anisotropy, Magnetic tunnel junction

MgO-based magnetic tunnel junction (MTJ) is of great interest as a non-volatile memory. Voltage controlled magnetic anisotropy (VCMA) is an ideal technology in such a memory devices. CoFeB/MgO system has been employed in MTJs as well as VCMA studies. Although perpendicular magnetic anisotropy in CoFeB/MgO has large change after post-annealing, post-annealing temperature dependence of VCMA has not been clarified yet. In this study, we have fabricated Ta/ CoFeB/ MgO/ CoFeB MTJs with different post-annealing temperature and characterized the VCMA of CoFeB.