[13p-P8-1~46] 10 スピントロニクス・マグネティクス(ポスター)

▼ [13p-P8-39] Evaluation of characteristics of single-electron transistor made of Fe-MgF₂ granular film

〇(M2)Shusaku Honjo¹、Takafumi Uchida¹、Atsushi Fukuchi¹、Masashi Arita¹、Yasuo Takahashi¹ (1.IST. Hokkaido Univ.)

キーワード：single electron transistor, granular film, coulomb oscillation

Single-electron transistor (SET) transports electrons one by one, and shows low power consumption. To fabricate such devices, small single-electron islands are required. As widely known, such small dots having the size of several nm can easily be fabricated in many metallic materials by a method such as self-organization. It is suitable for increasing the operation temperature. The ferromagnetic- insulator granular film is one of such candidates, which shows the tunnel magnetoresistance (TMR). In this study, we fabricated a single-electron transistor made of the Fe-MgF₂ granular film, and its basic SET characteristics were investigated.