[13p-P8-1~46] 10 Spintronics and Magnetics(Poster)

[13p-P8-7] Change of Magnetic Anisotropy Applying Voltage for Tb-Fe-Co/MgO/Gd-Fe TMR Devices

〇(M1)Takayuki Ueno¹, Hidekazu Kinjo², Nobuhiko Funabashi², Shintaro Aso², Daisuke Kato², Kenichi Aoshima², Kiyoshi Kuga², Mitsuya Motohashi¹, Kenji Machida² (1.Tokyo Denki Univ., 2.NHK STRL)

Keywords:Tunnel Magneto Resistance, Voltage controled magnetic anisotropy