Approach to achieve high density current injection into UVC-LD structure

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Sep 14, 2016 8:45 AM - 12:00 PM A21 (Main Hall A)

Jitsuo Ohta(Univ. of Tokyo), Takeyoshi Onuma(Kogakuin Univ.)

11:45 AM - 12:00 PM

〇(M1)Takuma Matsumoto^1,2, Issei Ohshima^1,2, Noritoshi Maeda¹, Masafumi Jo¹, Norihiko Kamata², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Keywords:semiconductor, nitride, AlGaN