Growth of ragged surface p-GaN layers on InGaN/GaN MQW structures by MOCVD

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Sep 14, 2016 8:45 AM - 12:00 PM A21 (Main Hall A)

Jitsuo Ohta(Univ. of Tokyo), Takeyoshi Onuma(Kogakuin Univ.)

9:15 AM - 9:30 AM

〇Takuma Mori¹, Tatsuya Tsutsumi¹, Tomoki Kabata¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

Keywords:GaN