Photoluminescence characterization of Mg-implanted and epitaxial Mg-doped GaN on GaN substrates

Kazunobu Kojima; Shinya Takashima; Masaharu Edo; Katsunori Ueno; Mitsuaki Shimizu; Tokio Takahashi; Shoji Ishibashi; Akira Uedono; Shigefusa Chichibu

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-A21-1~11] 15.4 III-V-group nitride crystals

Wed. Sep 14, 2016 8:45 AM - 12:00 PM A21 (Main Hall A)

Jitsuo Ohta(Univ. of Tokyo), Takeyoshi Onuma(Kogakuin Univ.)

10:00 AM - 10:15 AM

[14a-A21-6] Photoluminescence characterization of Mg-implanted and epitaxial Mg-doped GaN on GaN substrates

〇Kazunobu Kojima¹, Shinya Takashima², Masaharu Edo², Katsunori Ueno², Mitsuaki Shimizu³, Tokio Takahashi³, Shoji Ishibashi³, Akira Uedono⁴, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Fuji Electric Co. Ltd., 3.AIST, 4.Univ. of Tsukuba)

Keywords:p-type GaN

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