[14a-A21-1~11] 15.4 III-V-group nitride crystals

[14a-A21-6] Photoluminescence characterization of Mg-implanted and epitaxial Mg-doped GaN on GaN substrates

〇Kazunobu Kojima¹, Shinya Takashima², Masaharu Edo², Katsunori Ueno², Mitsuaki Shimizu³, Tokio Takahashi³, Shoji Ishibashi³, Akira Uedono⁴, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Fuji Electric Co. Ltd., 3.AIST, 4.Univ. of Tsukuba)

Keywords:p-type GaN