Temperature dependence of Stokes shifts of excitons and biexcitons in Al<sub>0.61</sub>Ga<sub>0.39</sub>N ternary alloy epitaxial layers

Kazuki Ikeda; Hideaki Murotani; Takuto Tsurumaru; Ryota Fujiwara; Satoshi Kurai; Hideto Miyake; Kazumasa Hiramatsu; Yoichi Yamada

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-A21-1~11] 15.4 III-V-group nitride crystals

Wed. Sep 14, 2016 8:45 AM - 12:00 PM A21 (Main Hall A)

Jitsuo Ohta(Univ. of Tokyo), Takeyoshi Onuma(Kogakuin Univ.)

11:15 AM - 11:30 AM

[14a-A21-9] Temperature dependence of Stokes shifts of excitons and biexcitons in Al_0.61Ga_0.39N ternary alloy epitaxial layers

Kazuki Ikeda¹, 〇Hideaki Murotani², Takuto Tsurumaru¹, Ryota Fujiwara¹, Satoshi Kurai¹, Hideto Miyake³, Kazumasa Hiramatsu³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.Mie Univ.)

Keywords:AlGaN, biexciton, Stokes shift

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Presentation information

[14a-A21-1~11] 15.4 III-V-group nitride crystals

[14a-A21-9] Temperature dependence of Stokes shifts of excitons and biexcitons in Al0.61Ga0.39N ternary alloy epitaxial layers

[14a-A21-9] Temperature dependence of Stokes shifts of excitons and biexcitons in Al_0.61Ga_0.39N ternary alloy epitaxial layers