[14a-A23-1~10] 6.1 Ferroelectric thin films

△ [14a-A23-10] Polarization Induced Resistance Switching Effect in Au / VDF-TrFE / Si Junction

〇Naoto Enomoto¹, Yuuta Nakagawa¹, Yoichiro Hashizume¹, Takashi Nakajima¹, Soichiro Okamura¹ (1.Tokyo Univ. of Sci.)

Keywords:polarization induced resistance switching effect, ferroelectric polymer, tunnel junction

Recently, Ferroelectric Tunneling Junction (FTJ) device has attracted much interest as future non-volatile memory. We have reported the polarization induced resistance switching effect in Au / ferroelectric polymer VDF-TrFE / Pt. In this study, we fabricated FTJ device which had Au / VDF-TrFE / Si and evaluated the current densities versus electric field properties of it.