[14a-A23-1~10] 6.1 Ferroelectric thin films

[14a-A23-2] In-plane ferroelectric polarization in epitaxial BaTiO₃ thin films for multiferroic heterostructures

〇(PC)Katsuyoshi Komatsu¹, Ippei Suzuki¹, Takumi Aoki², Yosuke Hamasaki¹, Mitsuru Itoh¹, Tomoyasu Taniyama¹ (1.TiTech, 2.TDK)

Keywords:ferroelectric

In our previous study, we succeded to achieve electrical swiching of the perpendicular magnetization of Cu/Ni multilayer on BaTiO₃ (BTO) substarate[1]. However, it required more than 100 V electric field to swich the magnetic anisotropy. In this study, we succeeded to achieve in-plane ferroelctric polarization in BTO by choosing spinel MgAl₂O₄ as a substrate. This result will allow much lower electric field swiching of the magnetic anistropy from perpendicular to in-plane in multiferroic thin film heterostrucutures.[1] Y. Shirahata, et al., NPG Asia Mater. 7, e198 (2015)