The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[14a-A23-1~10] 6.1 Ferroelectric thin films

Wed. Sep 14, 2016 9:00 AM - 11:45 AM A23 (201B)

Shinya Yoshida(Tohoku Univ.), Tomoaki Yamada(Nagoya Univ.)

10:45 AM - 11:00 AM

[14a-A23-7] Growth of orientation controlled epitaxial (Bi, K)TiO3 films by pulse laser deposition.

Yuichi Nemoto1, Daichi Ichinose2, Takao Shimizu3, Hiroshi Uchida4, Yusuke Sato5, Wakiko Yamaoka5, Hiroshi Funakubo1,2,3 (1.Tokyo Tech. IGS, 2.Tokyo Tech. MCT, 3.Tokyo Tech. MECS, 4.Sophia Univ. FST, 5.TDK corp.)

Keywords:ferroelectric, lead free

The most popular material is Pb(Zr, Ti)O3 that shows crystal symmetry change from tetragonal to rhombohedral across the boundaries, so called morphotropic phase boundary (MPB) that shows large piezoelectric coefficient together with relatively high Curie temeparature. However, these materials include toxic lead materials, so that the development of the lead-free materials is highly required. (Bi1/2K1/2)TiO3 is known as a ferroelectric material with tetragonal symmetries. However, thin films of (Bi1/2K1/2)TiO3 have been limited to solution-based methods, but the tetragonal symmetries of the deposited films have not been reported. Then, we succussed to prepare epitaxial (Bi, K)TiO3 films with tetragonal symmetry for the first time and ferroelectric and piezoelectric properties were investigated. This time, We reported Growth of orientation controlled epitaxial (Bi, K)TiO3 films by pulse laser deposition.