The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[14a-A35-1~10] 13.9 Optical properties and light-emitting devices

Wed. Sep 14, 2016 9:00 AM - 11:45 AM A35 (303-304)

Takanori Kojima(Osaka Univ.)

10:30 AM - 10:45 AM

[14a-A35-6] Crystal Growth of Nitride Single-crystal Phosphor under High Pressure N2

Takuya Hasegawa1, Ryota Yamanashi1, Sun-woog Kim1, Kazuyoshi Uematsu1, Kenji Toda1, Mineo Sato1 (1.Niigata Univ.)

Keywords:Phosphor

The nitride single crystal phosphors were grown by gas-solid hybrid method using high purity raw materials, BN crucibles and high preassure N2 sintering furnace "VESTA". From the crystal structure analysis using single crystal, we discussed the location of luminescent center and its coordination environment.