[JSAP Paper Award Speech] Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Zenji Yatabe; Yujin Hori; Wancheng Ma; Joel T. Asubar; Masamichi Akazawa; Taketomo Sato; Tamotsu Hashizume

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14a-B1-1~1] 13.8 Compound and power electron devices and process technology

Wed. Sep 14, 2016 11:45 AM - 12:15 PM B1 (Exhibition Hall)

Seiji Nakamura(TMU)

11:45 AM - 12:15 PM

[14a-B1-1] [JSAP Paper Award Speech] Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

〇Zenji Yatabe¹, Yujin Hori², Wancheng Ma³, Joel T. Asubar⁴, Masamichi Akazawa³, Taketomo Sato³, Tamotsu Hashizume³ (1.Kumamoto Univ., 2.Furukawa Electric, 3.Hokkaido Univ., 4.Fukui Univ.)

Keywords:JSAP Paper Award

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