[14a-B12-1~11] 22.1 Joint Session M "Phonon Engineering"

[14a-B12-11] Thermal diffusivity measurement of AlN thin films formed by ion sputtering

〇Hiroya Ikeda^1,2, Masaya Wanami^1,2, Yuya Ota¹, Shuhei Asada³, Yuhei Suzuki¹, Shuichiro Hashimoto³, Takashi Matsukawa⁴, Yasuhiro Hayakawa^1,2, Hiroshi Inokawa^1,2, Masaru Shimomura², Kenji Murakami², Takanobu Watanabe³ (1.RIE, Shizuoka Univ., 2.GSIST, Shizuoka Univ., 3.Waseda Univ., 4.AIST)

Keywords:thermal diffusivity, AlN

In order to fabricate a Si-nanowire thermoelectric power generator, we have measure the thermal diffusivity of AlN thin films which is used as a thermally-conductive layer, by ac calorimetry. The diffusivity of AlN/SiO₂/Si was evaluated to be 2.0x10^-4m²/s while that of SiO₂/Si was 7.2x10^-4m²/s. We are analyzing the influence of the substrate.