[14a-B12-1~11] 22.1 Joint Session M "Phonon Engineering"

[14a-B12-6] Reverse Thermoelectric Power Generation of A SIlicon Nanowire Device

〇Shuichiro Hashimoto¹, Shuhei Asada¹, Taiyu Xu¹, Shunsuke Oba¹, Takashi Matsukawa², Takanobu Watanabe¹ (1.Waseda Univ., 2.AIST)

Keywords:Silicon Nanowire, Thermoelectric Generation

We have found experimentally an anomalous ther-moelectric (TE) characteristic of n-type Si nanowire (NW) connected to heavily doped n+-Si pads. We observed an opposite direction TE current of what is expected from the Seebeck coefficient of n-Si. The result is understandable by considering a ununiformity in the dopant concentration in the Si-NW TE device (TED). Dopant segregation at the SiO₂/Si interface leads to the formation of a potential barrier in the NW channel region, which impedes the diffusion of thermally activated electrons into the NW channel region, and it rather stimulates the injection of thermally generated minority carrier. The present result suggests important roles of the potential distribution and the behavior of minority carriers in nanoscale TEDs.