Fabrication of a periodically-inverted GaAs/AlGaAs doble-heterostructure p-i-n diode

Presentation information

Oral presentation

CS Code-sharing session » CS.1 3.5&3.14 Code-sharing session

Wed. Sep 14, 2016 9:30 AM - 12:15 PM B3 (Exhibition Hall)

10:15 AM - 10:30 AM

〇Ryosuke Suzuki¹, Tomonori Matsushita^1,2, Takashi Kondo^1,2 (1.Eng. Tokyo Univ., 2.RCAST, Tokyo Univ.)

Keywords:AlGaAs, p-i-n diode, wavelength conversion device