[14a-B4-1~5] 3.15 Silicon photonics

[14a-B4-2] Impact of lateral profile of implanted dopants in Si optical modulator

〇(M2)Kazuharu Takeuchi^1,2, Jaehoon Han^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST)

Keywords:Silicon Photonics, interleaved PN junction, Optical modulator

Although optical modulators based on career-depletion is expected to exhibit the high speed operation, they are being suffered low modulation efficiency. We reported that optical modulator with interleaved PN junctions can improve the modulation efficiency by shortening the itnerleaved period. However, due to impurity spreads to the lateral direction during ion implantation, we can't realize the ideal PN junctions. We report the simulation results of impact of lateral profile of implanted dopnts in optical modulator.