[14a-B5-1~12] 12.2 評価・基礎物性

▲ [14a-B5-8] Altering the electronics property of graphene nanoribbon
by adsorption of molecular nanoparticles

〇Reetu Raj Pandey¹、Amin Termeyousefi¹、Hirofumi Tanaka¹ (1.KYUTECH)

キーワード：GNR synthesis, Doping, Bandgap formation

Graphene nanoribbon (GNR) is a new material for electronic devices having wide area of attention among the researchers due to its exceptional properties¹. However, many of electronic applications are handicapped due to absence of bandgap in pristine GNRs. The electronics property of GNR can be altered by adsorption of foreign molecules which can be either electron acceptor or electron donner. Purpose of present work is to create the band gap in the synthesized semimetallic GNRs for future semiconducting applications. Although there are various methods to synthesize GNRs including chemical process and lithography, here we used sonochemical method² with the double-walled carbon nanotubes (DWNT) as a starting material. Obtained GNR solution was casted on substrate and then the electrodes were fabricated by EB lithography which bridges the GNR. Drain-source current (I_ds) was measured with respect to applied voltage (V_ds), which showed metallic characteristic of GNR. After adsorbtion of HAT-CN₆ molecules to GNR, it can be clearly seen the change in plot as shown in Fig. (b) which confirms that GNR was changed to semiconducting. The phenomenon was caused by formation of bottle neck of current pass with the HAT-CN₆ nanoparticles on the GNR, where transport of electrons takes place only through the side of GNR with less than 10nm width, to change GNR to semiconducting similar to previous report².