[14a-C41-7~12] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [14a-C41-8] Detection of hole spin transport in Ge using lateral spin-valve structures

〇Makoto Kawano¹, Kohei Santo¹, Masahiko Ikawa¹, Shinya Yamada¹, Takeshi Kanashima¹, Kohei Hamaya¹ (1.Osaka Univ.)

Keywords:germanium, hole spin transport

Detection of hole spin transport in p-Ge is quite challenging because the strong influence of the spin-orbit interaction in the valence band leads to very short hole spin relaxation times. Although electrical detection of spin-polarized holes in p-Ge has been reported by a three-terminal method, the reliability of the measurement is still an open question. Here we present hole spin-transport measurements in a p-Ge(111) layer using a Cu-based nonlocal lateral spin valve (LSV) with a p-Ge(111)/Fe₃Si heterointerface.