[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-14] Normally-off operation of GaN hetero-junction MIS-FET

〇Takuma Nanjo¹, Tetsuro Hayashida¹, Hidetoshi Koyama², Akifumi Imai¹, Eiji Yagyu¹, Akihiko Furukawa¹, Mikio Yamamuka¹ (1.Mitsubishi Electric Corp., 2.Mitsubishi Electric Corp)

Keywords:Nitride semiconductor, Power device, Normally-off

Normally-off operation was firstly demonstrated in simple planar type GaN MOS-HFET without using etching process. The obtained threshold voltage and drain current density were 60 mA/mm and +4.5 V, respectively.