[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

▲ [14a-P6-3] Electrochemical characterization of GaN porous structures for photochemical sensor application

〇Xiaoyi Zhang¹, Keisuke Ito¹, Hirofumi Kida¹, Yusuke Kumazaki¹, Taketomo Sato¹ (1.RCIQE)

Keywords:GaN, porous structure

High-density nanostructures of GaN have been widely investigated for highly electrochemical responses in application of chemical sensors, photocatalyst, photoelectrodes and so on. Porous structure is one of the attractive nanostructures with the merit of high productivity over a large area and low damages during etching. In addition, porous structure has the better photo response. In this study, the characteristic of porous structure GaN is measured and discussed as an application of a Photo chemical sensor.