[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-5] Effects of hydrogen contained atmosphere on formation of ohmic contacts to p-GaN

〇Masayasu Takahashi¹, Kazuo Tsutsui¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Tech)

Keywords:GaN