[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-10] Current Status of GaN RF Devices

〇Naoki Hara¹, Kozo Makiyama¹ (1.Fujitsu Labs.)

Keywords:GaN, RF Devices

Power amplifiers using GaN is expected to realize 10-20 times higher output power compared with those using GaAs or Si. Current status of GaN RF Devices is shown in the presentation.