The 77th JSAP Autumn Meeting, 2016

Presentation information

Symposium (Oral)

Symposium » Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

Wed. Sep 14, 2016 1:00 PM - 7:00 PM A21 (Main Hall A)

Jun Suda(Kyoto Univ.), Masaaki Kuzuhara(Univ. of Fukui), Kenji Shiraishi(Nagoya Univ.)

5:00 PM - 5:30 PM

[14p-A21-10] Current Status of GaN RF Devices

Naoki Hara1, Kozo Makiyama1 (1.Fujitsu Labs.)

Keywords:GaN, RF Devices

Power amplifiers using GaN is expected to realize 10-20 times higher output power compared with those using GaAs or Si. Current status of GaN RF Devices is shown in the presentation.