[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-12] An Overview of GaN-based P- and N-channel Power Integrated Circuit Technologies

〇Akira Nakajima¹, Sin-ichi Nishizawa¹, Hiromichi Ohashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima², Hitoshi Wakabayashi², Vineet Unni³, E. M. S. Narayanan³ (1.AIST, 2.Tokyo Tech. Univ., 3.Sheffield Univ.)

Keywords:GaN, CMOS, 2DHG

GaN-based power devices are emerging candidates for the next generation of kw-class monolithic power converters. In recently, toward realization of this, we reported (1) polarization-junction platform for GaN-based power ICs, which has both high-density 2DHG and 2DEG, (2) monolithic integration of p-channel MOSFETs and n-channel MOSFETs on the platform, and (3) high-voltage GaN transistors and diodes using the polarization superjunction concept. In this presentation, we will give an overview of these technologies.