The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[14p-A25-1~21] 15.1 Bulk crystal growth

Wed. Sep 14, 2016 1:15 PM - 7:00 PM A25 (202)

Yuui Yokota(Tohoku Univ.), Hiraku Ogino(AIST)

2:15 PM - 2:30 PM

[14p-A25-4] Electrical properties of b-Ga2O3 single crystal grown in ambient air

Motohisa Kado1, Etsuko Ohba2, Takumi Kobayashi2, Yoshio Nakamura2, Keigo Hoshikawa3 (1.Toyota Motor Co., 2.Fujikoshi Machinery Co., 3.Shinshu Univ.)

Keywords:wide band gap semiconductor, single crystal growth

Electrical properties of β-Ga2O3 single crystal grown by vertical Bridgman (VB) method in ambient air have been investigated. A Sn-doped single crystal grown by VB method has shown resistivity comparable to that of a single crystal grown by EFG method. In addition, a single crystal grown by VB method and one grown by EFG method has shown almost the same properties in terms of relationship between carrier concentration and mobility. Possibility of controlling electrical properties of β-Ga2O3 single crystal grown by VB method has been demonstrated.