[14p-A25-1~21] 15.1 Bulk crystal growth

[14p-A25-4] Electrical properties of b-Ga₂O₃ single crystal grown in ambient air

〇Motohisa Kado¹, Etsuko Ohba², Takumi Kobayashi², Yoshio Nakamura², Keigo Hoshikawa³ (1.Toyota Motor Co., 2.Fujikoshi Machinery Co., 3.Shinshu Univ.)

Keywords:wide band gap semiconductor, single crystal growth

Electrical properties of β-Ga2O3 single crystal grown by vertical Bridgman (VB) method in ambient air have been investigated. A Sn-doped single crystal grown by VB method has shown resistivity comparable to that of a single crystal grown by EFG method. In addition, a single crystal grown by VB method and one grown by EFG method has shown almost the same properties in terms of relationship between carrier concentration and mobility. Possibility of controlling electrical properties of β-Ga2O3 single crystal grown by VB method has been demonstrated.