[14p-A26-1~16] 6.2 Carbon-based thin films

[14p-A26-7] Mapping of p-diamond Schottky contacts using scanning internal photoemission microscopy

〇Toshichika Aoki¹, Tokuyuki Teraji², Yasuo Koide², Kenji Shiojima¹ (1.Univ. of Fukui, 2.NIMS)

Keywords:p-type diamond, Scanning internal photoemission spectroscopy, Schottky contact

We conducted mapping of Au/p-diamond contact using scanning internal photoemission spectroscopy that can evaluate metal/semiconductor interface in two-dimensional. In the typical electrode, homogeneous images were obtained in both Y and Schottky barrier height (qΦ_B) maps. In-plane average of qΦ_B was obtained to be 2.05 eV, high qΦ_B which is feature of the p-type diamond was obtained. In the redeposited electrode after the electrode removed due to reuse of this epitaxial substrate, Y map of the removed electrode mark was obtained. This method was shown to be very sensitive to the interface composition.