3:15 PM - 3:30 PM
[14p-A33-8] MBE grown MoSe2 films on 2 inch GaAs (111)B wafers
Keywords:Transition metal dichalcogenide, MBE, GaAs
Recently, transition metal dichalcogenides (TX2) have stirred a lot of interest as next-generation materials. They take layered structures, where the adjacent layers are weakly bound by van der Waals force. These materials offer a large variety of properties, depending on the combination of T and X. We focus on semiconducting MoSe2. In order to realize large-area MoSe2 with layer number controlled, we have been carrying out the growth of MoSe2 on GaAs by MBE.
Displacement of Group V arsenic (As) by group VI selenium (Se) changes the chemically-active GaAs(111)B surface into an inactive one. MoSe2 can be grown on the Se-terminated GaAs(111)B with van der Waals coupling. The RHEED images and X-ray diffraction pattern indicate that a c-axis oriented MoSe2 is epitaxially grown on GaAs. In the initial stage of the growth, streak patterns originating from the MoSe2 are superimposed on those of Se-GaAs, indicating that MoSe2 grows with its inherent lattice constant. In-plane relationships are [11-20]MoSe2 // [1-10]GaAs and [10-10]MoSe2 // [1-21]GaAs with no rotation domain. Cross sectional STEM image shows MoSe2 can climb over a step of GaAs.
Displacement of Group V arsenic (As) by group VI selenium (Se) changes the chemically-active GaAs(111)B surface into an inactive one. MoSe2 can be grown on the Se-terminated GaAs(111)B with van der Waals coupling. The RHEED images and X-ray diffraction pattern indicate that a c-axis oriented MoSe2 is epitaxially grown on GaAs. In the initial stage of the growth, streak patterns originating from the MoSe2 are superimposed on those of Se-GaAs, indicating that MoSe2 grows with its inherent lattice constant. In-plane relationships are [11-20]MoSe2 // [1-10]GaAs and [10-10]MoSe2 // [1-21]GaAs with no rotation domain. Cross sectional STEM image shows MoSe2 can climb over a step of GaAs.