[14p-A34-1~10] 13.10 Compound solar cells

[14p-A34-8] Structural characterization of MBE-grown CuGaSe2/GaAs by X-ray fluorescence holography

〇Sho Shirakata¹, Naohisa Happo², Shinya Hosokawa³, Koji Kimura⁴, Koichi Hayashi⁴ (1.Ehime Univ., 2.Hiroshima City Univ, 3.Kumamoto Univ, 4.Nagoya Inst. Tech.)

Keywords:CuGaSe2, X-ray fluorescence holography, epitaxial thin film

X-ray fluorescence holography (XFH) has been carried on the MBE-grown CuGaSe2/GaAs in order to study the three dimensional local structure. The 300 nm thick (001)CuGaSe2 layer was grown on (100)GaAs substrate by means of MBE. For XFH measurement, incident x-rays with eight different energies (9.20KeV~12.7KeV) were used and holograms were formed. From the holograms, atomic images were reconstructed. In the cation plane, atomic images as far as tenth nearest neighbor of the central Cu atom were clearly observed.