[14p-B1-1~6] IoT/IoE Device Technologies for AI/Deep-Learning era

[14p-B1-3] Engineering Proton Volatility in Oxides for Two-Terminal Neuromorphic Devices

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Keywords:electrochemical dope, solid state ionics

A two-terminal volatile memory with an arbitrary time cnstant will drastically simplify the structure of neuromorphic circuits. In this work, a large number of protons were successfully confined in a TiO₂ thin film with a few nm SiO₂ cap, and their diffusion speed was controlled by changing the thickness of SiO₂. These results indicate such materials of TiO₂ and SiO₂ can be the fundamental building blocks for proton engineering in solid-state devices, implementing the neuromorphic functions with various time constants.