[14p-B11-1~13] 12.4 Organic light-emitting devices and organic transistors

[14p-B11-11] Influence of contact resistance on the performance of high-mobility top-gate organic transistors with short channel lengths

〇Takashi Nagase^1,2, Ryosuke Nakamichi¹, Takashi Kobayashi^1,2, Yuichi Sadamitsu³, Hiroyoshi Naito^1,2 (1.Osaka Pref. Univ., 2.RIMED, 3.Nippon Kayaku Co., Ltd.)

Keywords:organic field-effect transistor, contact resistance, short channel

Development of short-channel high-mobility organic field-effect transistors (OFETs) is an important issue for the practical application to flexible and printed electronic circuits. We have reported that the saturation field-effect mobility of solution-processed top-gate OFETs with channel length of 5 micrometers depends largely on the thickness of the gate insulator. In this paper, we discuss the difference in linear and saturation mobilities in the short-channel top-gate OFETs by taking account of the influence of contact resistance.