4:15 PM - 4:30 PM
[14p-B11-11] Influence of contact resistance on the performance of high-mobility top-gate organic transistors with short channel lengths
Keywords:organic field-effect transistor, contact resistance, short channel
Development of short-channel high-mobility organic field-effect transistors (OFETs) is an important issue for the practical application to flexible and printed electronic circuits. We have reported that the saturation field-effect mobility of solution-processed top-gate OFETs with channel length of 5 micrometers depends largely on the thickness of the gate insulator. In this paper, we discuss the difference in linear and saturation mobilities in the short-channel top-gate OFETs by taking account of the influence of contact resistance.