[14p-B11-1~13] 12.4 Organic light-emitting devices and organic transistors

▲ [14p-B11-9] Dependence of Source Frequency on Magnetic Field Effect in Organic Transistors

〇(P)SongToan Pham¹, Hirokazu Tada¹ (1.Graduate School of Engineering Science, Osaka University)

Keywords:magnetic field effect, transistor, impedance

Magnetic field effects observed in various organic devices, abbreviated as OME, are of great scientific interest because of their large magnetoresistance (MR) up to 10% at room temperature and under small magnetic fields of approximately 10 mT without ferromagnetic contacts [1]. The negative OME was observed in thin-film pentacene field effect transistors (FET) under the light irradiation with a MR value of below 0.5% [2]. In this work, a small AC voltage was applied in source electrode to study its effect on OME in pentacene transistors. The results reveal that the magnetic field effects can be enhanced by adding small AC voltage with frequency of around 10-1000 Hz, which is much larger (up to 3%) than the conventional studies using only DC applied voltage.