[14p-B2-1~19] 3.9 Terahertz technologies

[14p-B2-17] Improvement in Noise Characteristics of GaAsSb-based Backward Diodes for Terahertz Receiver Applications

〇Tsuyoshi Takahashi^1,2, Masaru Sato^1,2, Shoichi Shiba¹, Yasuhiro Nakasha^1,2, Naoki Hara^1,2, Taisuke Iwai¹, Naoya Okamoto¹, Keiji Watanabe¹ (1.Fujitsu Labs., 2.Fujitsu)

Keywords:detector, tunnel, noise

Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p⁺-GaAsSb/n-InGaAs heterojunction. Junction resistance was decreased by removing an InAlAs barrier layer from a conventional p⁺-GaAsSb/i-InAlAs/n-InGaAs structure. Although sensitivity indicated slight decrease, noise equivalent power (NEP) was drastically improved from 303 to 64 pW/√Hz at 300 GHz.